93LC66B The 93AA66 is a 4K-bit Low-voltage Serial Electrically Erasable Prom Memory With an Org Pin Selectable Memory Configuration of X 8-bits or. bit organization (93LC66B) x16bits (93LC66B). .. Please specify which device, revision of silicon and Data Sheet (include Literature #) you are. 93LC66B datasheet, 93LC66B circuit, 93LC66B data sheet: MICROCHIP – 4K Microwire Compatible Serial EEPROM,alldatasheet, datasheet, Datasheet.

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During power-up, all programming modes of operation are inhibited until VCC has reached a level greater than 2. CS is brought low following the loading of the last address bit.

93LC66B Datasheet PDF

After execution datsaheet an instruction i. However, a programming cycle which is already in progress will be completed, regardless of the Chip Select CS input signal.

Your local Microchip sales ofce. Sequential read is possible when CS is held high. Chandler, AZ Tel: No licenses are conveyed, implicitly or otherwise, under any intellectual property rights.

As soon as CS is high, the device is no longer in the standby mode. M Preliminary Information contained in this publication regarding device applications and the like is intended for suggestion only and may be superseded by updates.

To determine if an errata sheet exists for a particular device, please contact one of the following: During power-down, the source data protection circuitry acts to inhibit all programming modes when Vcc has fallen below 2.



If CS is brought low during a program cycle, the device will go into standby mode as soon as the programming cycle is completed. These clock cycles are required to clock in all required opcode, address, and data bits before an instruction is executed Table and Table After the last data bit is put on the DI pin, the falling edge of CS initiates the self-timed autoerase and programming cycle.

The higher the current sourcing capability of A0, the higher the voltage at the Data Out pin. After power-up, the device is automatically in the EWDS mode. An instruction following a START condition will only be executed if the required amount of opcodes, addresses, and data bits for any particular instruction is clocked in. A high level selects the device; a low level deselects the device and forces it into standby mode.

Data bits are also clocked out on the positive edge of CLK. If CS is high, but a START condition has not been detected, any number of clock cycles can be received by the device without changing its status i.

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93LC66B PDF Datasheet浏览和下载

Exposure to maximum rating conditions for extended periods may affect device reliability. Opcode, address, and data bits are clocked in on the positive edge of CLK. This falling edge of the CS pin initiates the datasheer programming cycle. Under such a condition the voltage level seen at Data Out is undened and will depend upon the relative impedances of Data Out and the signal source driving A0. The Microchip dagasheet and name are registered trademarks of Microchip Technology Inc.


The memory data will automatically cycle to the next register and output sequentially. This application is not tested but guaranteed by characterization. Advanced CMOS technology makes these devices ideal for low power nonvolatile memory applications.

Microchip Tech 93LC66B-E/P – PDF Datasheet – EEPROM In Stock |

This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specication is not implied. This gives 93lc6b controlling master freedom in preparing opcode, address, and data. No representation or warranty is given and no liability is assumed by Microchip Technology Incorporated with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise.